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arXiv · 1108.2021

BN/Graphene/BN Transistors for RF Applications

Han Wang·Thiti Taychatanapat·Allen Hsu·Kenji Watanabe·Takashi Taniguchi·Pablo Jarillo-Herrero·Tomas Palacios
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Abstract

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-off frequency fT=33 GHz and an fT.LG product of 15 GHz.um. The improved performance obtained by the BN/Graphene/BN structure is very promising to enable the next generation of high frequency graphene RF electronics.

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Han Wang, Thiti Taychatanapat, Allen Hsu, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero, Tomas Palacios. 2011-08-09. BN/Graphene/BN Transistors for RF Applications. https://doi.org/10.1109/led.2011.2160611

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