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arXiv · 1108.2218

Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

Vladimir V. Talanov·André Scherz·Robert L. Moreland·Andrew R. Schwartz
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Abstract

We present a method for noncontact, noninvasive measurements of dielectric constant, k, of 100-nm- to 1.5-\mu m-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 micron sampling spot size, and provides <0.3% precision and <2% accuracy for k-value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few-micron tip size.

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Vladimir V. Talanov, André Scherz, Robert L. Moreland, Andrew R. Schwartz. 2011-08-10. Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe. https://doi.org/10.1063/1.2203238

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