Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn thin films by hard x-ray photoelectron spectroscopy

Xeniya Kozina; Tino Jaeger; Siham Ouardi; Andrei Gloskowskij; Gregory Stryganyuk; Gerhard Jakob; Takeharu Sugiyama; Eiji Ikenaga; Gerhard H. Fecher; Claudia Felser

doi:10.1063/1.3665621

arXiv · 1111.1031

Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn thin films by hard x-ray photoelectron spectroscopy

Xeniya Kozina·Tino Jaeger·Siham Ouardi·Andrei Gloskowskij·Gregory Stryganyuk·Gerhard Jakob·Takeharu Sugiyama·Eiji Ikenaga·Gerhard H. Fecher·Claudia Felser

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Abstract

The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of {\it "in-gap"} states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.

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Xeniya Kozina, Tino Jaeger, Siham Ouardi, Andrei Gloskowskij, Gregory Stryganyuk, Gerhard Jakob, Takeharu Sugiyama, Eiji Ikenaga, Gerhard H. Fecher, Claudia Felser. 2011-11-04. Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn thin films by hard x-ray photoelectron spectroscopy. https://doi.org/10.1063/1.3665621

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