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arXiv · 1112.5398

Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing

Oleg G. Semyonov·Arsen V. Subashiev·Alexander Shabalov·Nadia Lifshitz·Zhichao Chen·Takashi Hosoda·Serge Luryi
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Abstract

We observed and studied strong reduction of optical reflection from the surface of InP wafers after high-temperature annealing. The effect is observed over a wide range of the incident wavelengths, and in the transparency band of the material it is accompanied by increasing transmission. The spectral position of a minimum (almost zero) of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in the spectral range between 0.5 and 6 eV. The effect is explained by the formation of a uniform oxide layer, whose parameters (thicknesses and average index) are estimated by detailed modeling.

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Oleg G. Semyonov, Arsen V. Subashiev, Alexander Shabalov, Nadia Lifshitz, Zhichao Chen, Takashi Hosoda, Serge Luryi. 2011-12-22. Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing. https://arxiv.org/abs/1112.5398

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