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arXiv · 1201.4293

Water-Gated Charge Doping of Graphene Induced by Mica Substrates

Jihye Shim·Chun Hung Lui·Taeg Yeoung Ko·Young-Jun Yu·Philip Kim·Tony F. Heinz·Sunmin Ryu
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Abstract

We report on the existence of water-gated charge doping of graphene deposited on atomically flat mica substrates. Molecular films of water in units of ~0.4 nm-thick bilayers were found to be present in regions of the interface of graphene/mica hetero-stacks prepared by micromechanical exfoliation of kish graphite. The spectral variation of the G and 2D bands, as visualized by Raman mapping, shows that mica substrates induce strong p-type doping in graphene, with hole densities of $(9 \pm 2) \times 1012 cm${-2}$. The ultrathin water films, however, effectively block interfacial charge transfer, rendering graphene significantly less hole-doped. Scanning Kelvin probe microscopy independently confirmed a water-gated modulation of the Fermi level by 0.35 eV, in agreement with the optically determined hole density. The manipulation of the electronic properties of graphene demonstrated in this study should serve as a useful tool in realizing future graphene applications.

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Jihye Shim, Chun Hung Lui, Taeg Yeoung Ko, Young-Jun Yu, Philip Kim, Tony F. Heinz, Sunmin Ryu. 2012-01-20. Water-Gated Charge Doping of Graphene Induced by Mica Substrates. https://doi.org/10.1021/nl2034317

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