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arXiv · 1201.5953

Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces

B. Förg·C. Richter·J. Mannhart
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Abstract

Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,{\deg}C.

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B. Förg, C. Richter, J. Mannhart. 2012-01-28. Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces. https://doi.org/10.1063/1.3682102

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