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arXiv · 1202.2015

Very low bias stress in n-type organic single crystal transistors

Mario Barra·Flavia V. Di Girolamo·Nikolas A. Minder·Ignacio Gutiérrez Lezama·Zhihua Chen·Antonio Facchetti·Alberto F. Morpurgo·Antonio Cassinese
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Abstract

Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stretched exponential - that are \tau ~ 2\cdot10^9 s in air and \tau ~ 5\cdot10^9 s in vacuum - approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.

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Mario Barra, Flavia V. Di Girolamo, Nikolas A. Minder, Ignacio Gutiérrez Lezama, Zhihua Chen, Antonio Facchetti, Alberto F. Morpurgo, Antonio Cassinese. 2012-02-09. Very low bias stress in n-type organic single crystal transistors. https://doi.org/10.1063/1.3698341

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