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arXiv · 1204.6352

Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

A. Gocalinska·M Manganaro·E. Pelucchi
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Abstract

A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the [111]B direction.

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A. Gocalinska, M Manganaro, E. Pelucchi. 2012-04-25. Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure. https://doi.org/10.1063/1.3703587

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