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arXiv · 1207.4824

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

Ming-Wei Lin·Lezhang Liu·Qing Lan·Xuebin Tan·Kulwinder Dhindsa·Peng Zeng·Vaman M. Naik·Mark Ming-Cheng Cheng·Zhixian Zhou
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Abstract

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without polymer electrolyte) fabricated on Si/SiO2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/ LiClO4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the polymer electrolyte is used as a gate medium, the MoS2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 106 as a result of the strong gate-channel coupling.

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Ming-Wei Lin, Lezhang Liu, Qing Lan, Xuebin Tan, Kulwinder Dhindsa, Peng Zeng, Vaman M. Naik, Mark Ming-Cheng Cheng, Zhixian Zhou. 2012-07-19. Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte. https://doi.org/10.1088/0022-3727%2F45%2F34%2F345102

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