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arXiv · 1210.3244

On melting of silicon carbide under pressure

Petr S. Sokolov·Vladimir A. Mukhanov·Thierry Chauveau·Vladimir L. Solozhenko
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Abstract

The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.

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Petr S. Sokolov, Vladimir A. Mukhanov, Thierry Chauveau, Vladimir L. Solozhenko. 2012-10-11. On melting of silicon carbide under pressure. https://doi.org/10.3103/s1063457612050097

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