High-order sideband generation in bulk GaAs

Benjamin Zaks; Hunter Banks; Mark S. Sherwin

doi:10.1063/1.4773557

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arXiv · 1210.6339

High-order sideband generation in bulk GaAs

Benjamin Zaks·Hunter Banks·Mark S. Sherwin

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Abstract

When an intense THz field at frequency f_THz is applied to excitons resonantly created in bulk GaAs by a near IR laser at frequency f_NIR, sidebands are observed at frequencies f_sideband = f_NIR + 2nf_THz, where n is an integer. At temperature T=10 K, sidebands of order -4 {greater than or equal to} 2n {greater than or equal to} 16 are observed. Sidebands up to 10th order persist at 170 K.

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Benjamin Zaks, Hunter Banks, Mark S. Sherwin. 2012-10-23. High-order sideband generation in bulk GaAs. https://doi.org/10.1063/1.4773557

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