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arXiv · 1212.3309

Device model of silicon nanowire bioFETs

M. W. Denhoff
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Abstract

A device model of biological molecule sensors based on semiconductor nanowires has been developed. This model of a bioFET is based on the concept of the electrolytic absolute electrode potential. From that starting point a semiconductor device model of the nanowire solution biomolecule system was derived. The model includes the Gouy-Chapman-Stern model of the salt solution double layer, site binding charges on the electrode surface, and biological molecules in the form of a membrane layer. A simple method of solving this model is presented using the finite element method. Some examples showing the general properties of the model are given.

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M. W. Denhoff. 2012-12-13. Device model of silicon nanowire bioFETs. https://arxiv.org/abs/1212.3309

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