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arXiv · 1212.4272

Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer

A. A. Lebedev·N. V. Agrinskaya·V. A. Beresovets·V. I. Kozub·S. P. Lebedev·A. A. Sitnikova
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Abstract

Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov- de Haas oscillations shown the features, typical for single-layered graphene. The low temperature resistance demonstrated an increase with temperature increase, which also corresponds to a behavior typical for single-layered graphene (antilocalization). However at higher temperatures the resistance decreased with an increase of temperature, which corresponds to a weak localization. We believe that the observed behavior can be explained by a parallel combination of contributions to the conductivity of single-layered graphene and of multigraphene, the latter allowing to escape damages of the graphene by atmosphere effect.

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A. A. Lebedev, N. V. Agrinskaya, V. A. Beresovets, V. I. Kozub, S. P. Lebedev, A. A. Sitnikova. 2012-12-18. Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer. https://arxiv.org/abs/1212.4272

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