Stacking and electric field effects on the electronic properties of the layered GaN

Dongwei Xu; Haiying He; Ravindra Pandey; Shashi P. Karna

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arXiv · 1302.5157

Stacking and electric field effects on the electronic properties of the layered GaN

Dongwei Xu·Haiying He·Ravindra Pandey·Shashi P. Karna

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Abstract

Stability and electronic properties of atomic layers of GaN are investigated in the framework of the van der Waals-density functional theory. We find that the ground state of the layered GaN is a planar graphene-like configuration rather than a buckled bulk-like configuration. Application of an external perpendicular electric field to the layered GaN induces distinct stacking-dependent features of the tunability of the band gap; the band gap of the monolayer does not change whereas that of the trilayer GaN is significantly reduced for the applied field of 0.4 V/ {\AA}. It is suggested that such a stacking-dependent tunability of the band gap in the presence of an applied field may lead to novel applications of the devices based on the layered GaN.

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Dongwei Xu, Haiying He, Ravindra Pandey, Shashi P. Karna. 2013-02-21. Stacking and electric field effects on the electronic properties of the layered GaN. https://arxiv.org/abs/1302.5157

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