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arXiv · 1303.3869

Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring

M. Pokharel·H. Z. Zhao·M. Koirala·Z. F. Ren·C. Opeil
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Abstract

We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at low-temperatures. Second, the thermal conductivity, which was already reduced in nanostructured FeSb2 samples, is further reduced by increased point defect scattering through the n type substitution of Sb site by Te atom. The combined effect results in a ZT = 0.022 at 100 K, an increase of 62% over the ZT value for the optimized Te-doped single crystal sample. Hall coefficient and electrical resistivity measurements reveal a decreased mobility and increased concentration of the carriers in the doped sample.

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M. Pokharel, H. Z. Zhao, M. Koirala, Z. F. Ren, C. Opeil. 2013-03-15. Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring. https://arxiv.org/abs/1303.3869

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