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arXiv · 1305.2470

Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3

A. A. Taskin·Fan Yang·Satoshi Sasaki·Kouji Segawa·Yoichi Ando
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Abstract

The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

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A. A. Taskin, Fan Yang, Satoshi Sasaki, Kouji Segawa, Yoichi Ando. 2014-03-14. Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3. https://doi.org/10.1103/physrevb.89.121302

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