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arXiv · 1306.3310

Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface X-ray diffraction

Diogo Duarte dos Reis·Lucas Barreto·Marco Bianchi·Guilherme Almeida Silva Ribeiro·Edmar Avellar Soares·Wendell Simoes e Silva·Vagner Eustaquio de Carvalho·Jonathan Rawle·Moritz Hoesch·Chris Nicklin·Willians Principe Fernandes·Jianli Mi·Bo Brummerstedt Iversen·Philip Hofmann
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Abstract

The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron diffraction and surface X-ray diffraction at room temperature. Both approaches show that the crystal is terminated by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface relaxations obtained by both techniques are in good agreement with each other and found to be small. This includes the relaxation of the van der Waals gap between the first two quintuple layers.

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Diogo Duarte dos Reis, Lucas Barreto, Marco Bianchi, Guilherme Almeida Silva Ribeiro, Edmar Avellar Soares, Wendell Simoes e Silva, Vagner Eustaquio de Carvalho, Jonathan Rawle, Moritz Hoesch, Chris Nicklin, Willians Principe Fernandes, Jianli Mi, Bo Brummerstedt Iversen, Philip Hofmann. 2013-06-14. Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface X-ray diffraction. https://doi.org/10.1103/physrevb.88.041404

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