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arXiv · 1310.8066

Single-Layer MoS2 Phototransistors

Zongyou Yin·Hai Li·Hong Li·Lin Jiang·Yumeng Shi·Yinghui Sun·Gang Lu·Qing Zhang·Xiaodong Chen·Hua Zhang
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Abstract

A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multi-functional optoelectronic device applications in future.

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Zongyou Yin, Hai Li, Hong Li, Lin Jiang, Yumeng Shi, Yinghui Sun, Gang Lu, Qing Zhang, Xiaodong Chen, Hua Zhang. 2013-10-30. Single-Layer MoS2 Phototransistors. https://doi.org/10.1021/nn2024557

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