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arXiv · 1311.1650

Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction

Ren R·Weiren Wang·Xuan Li·Zhongxia Zhao
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Abstract

The junction magnetoresistivity and domain phase transition were studied between ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substrates epitaxially by pulse laser deposit. The ferromagnetic transformation into phase-separated (two phase) state was displayed below Tc~127 and has observed that the lattice change discontinuously in the doped cobalt perovskites La0.4Gd0.1Sr0.5CoO3. The Ginzburg-Landau phase field is introduced to deduce antiferroelectric domain structure in LGSCO thin film. On the basis of the domain structures, the phase boundary of thin film is strongly dependent on the combination of electric-mechanical coupling. The phase transformation into phase separated state occurs below Tc~127-128K, and have displayed that the lattice constants change discontinuously at the transformation. The positive MR of ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at 0.5 T is 6.05% for approximately 140K.

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Ren R, Weiren Wang, Xuan Li, Zhongxia Zhao. 2013-11-07. Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction. https://arxiv.org/abs/1311.1650

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