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arXiv · 1402.3489

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

Marion J. L. Sourribes·Ivan Isakov·Marina Panfilova·Huiyun Liu·Paul A. Warburton
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Abstract

We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0\leq x \leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$ nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs$_{0.85}$Sb$_{0.15}$ nanowires than InAs nanowires.

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Marion J. L. Sourribes, Ivan Isakov, Marina Panfilova, Huiyun Liu, Paul A. Warburton. 2014-02-14. Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon. https://doi.org/10.1021/nl5001554

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