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arXiv · 1403.5594

The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions

M. Minohara·Y. Hikita·C. Bell·H. Inoue·M. Hosoda·H. K. Sato·H. Kumigashira·M. Oshima·E. Ikenaga·H. Y. Hwang
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Abstract

We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These results demonstrate gate control of the collapse of permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

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M. Minohara, Y. Hikita, C. Bell, H. Inoue, M. Hosoda, H. K. Sato, H. Kumigashira, M. Oshima, E. Ikenaga, H. Y. Hwang. 2014-03-21. The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions. https://arxiv.org/abs/1403.5594

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