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arXiv · 1406.7325

Isolated electron spins in silicon carbide with millisecond-coherence times

David J. Christle·Abram L. Falk·Paolo Andrich·Paul V. Klimov·Jawad ul Hassan·Nguyen T. Son·Erik Janzén·Takeshi Ohshima·David D. Awschalom
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Abstract

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route to wafer-scale quantum technologies.

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David J. Christle, Abram L. Falk, Paolo Andrich, Paul V. Klimov, Jawad ul Hassan, Nguyen T. Son, Erik Janzén, Takeshi Ohshima, David D. Awschalom. 2014-06-27. Isolated electron spins in silicon carbide with millisecond-coherence times. https://doi.org/10.1038/nmat4144

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