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arXiv · 1407.4670

Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence

Debasree Chowdhury·Debabrata Ghose*·Safiul Alam Mollick·Biswarup Satpati·Satya Ranjan Bhattacharyya
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Abstract

Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact.

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Debasree Chowdhury, Debabrata Ghose*, Safiul Alam Mollick, Biswarup Satpati, Satya Ranjan Bhattacharyya. 2014-07-17. Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence. https://arxiv.org/abs/1407.4670

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