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arXiv · 1407.6900

Magnetic Proximity Effect and Interlayer Exchange Coupling of Ferromagnetic/Topological Insulator/Ferromagnetic Trilayer

Mingda Li·Wenping Cui·Jin Yu·Zuyang Dai·Zhe Wang·Ferhat Katmis·Wanlin Guo·Jagadeesh Moodera
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Abstract

Magnetic proximity effect between topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly challenging. We theoretically investigate the interlayer exchange coupling of two FMIs separated by a TI thin film, and show that the particular electronic states of the TI contributing to the proximity effect can be directly identified through the coupling behavior between two FMIs, together with a tunability of coupling constant. Such FMI/TI/FMI structure not only serves as a platform to clarify the magnetic structure of FMI/TI interface, but also provides insights into designing the magnetic storage devices with ultrafast response.

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Mingda Li, Wenping Cui, Jin Yu, Zuyang Dai, Zhe Wang, Ferhat Katmis, Wanlin Guo, Jagadeesh Moodera. 2014-07-25. Magnetic Proximity Effect and Interlayer Exchange Coupling of Ferromagnetic/Topological Insulator/Ferromagnetic Trilayer. https://doi.org/10.1103/physrevb.91.014427

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