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arXiv · 1412.8128

Optical Phonons in Twisted Bilayer Graphene with Gate-Induced Asymmetric Doping

Ting-Fung Chung·Rui He·Tai-Lung Wu·Yong P. Chen
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Abstract

Twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed. We observe prominent splitting and intensity quenching on the G Raman band when the carrier density is tuned away from charge neutrality. This G peak splitting is attributed to asymmetric charge doping in the two graphene layers, which reveals individual phonon self-energy renormalization of the two weakly-coupled layers of graphene. We estimate the effective interlayer capacitance at low doping density of tBLG using an interlayer screening model. The anomalous intensity quenching of both G peaks is ascribed to the suppression of resonant interband transitions between the two saddle points (van Hove singularities), that are displaced in the momentum space by gate-tuning. In addition, we observe a softening (hardening) of the R Raman band, a superlattice-induced phonon mode in tBLG, in electron (hole) doping. Our results demonstrate that gate modulation can be used to control the optoelectronic and vibrational properties in tBLG devices.

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Ting-Fung Chung, Rui He, Tai-Lung Wu, Yong P. Chen. 2014-12-28. Optical Phonons in Twisted Bilayer Graphene with Gate-Induced Asymmetric Doping. https://doi.org/10.1021/nl504318a

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