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arXiv · 1503.00390

Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport

Fucong Fei·Qianjin Wang·Zhongxia Wei·Rui Wang·Danfeng Pan·Bo Zhao·Xuefeng Wang·Xinran Wang·Fengqi Song·Baigeng Wang·Jianguo Wan·Guanghou Wang
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Abstract

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. A rectification curve was observed at low temperatures. Quantum correction from the weak antilocalization reveals the transport of the topological surface state. There was, therefore, a staggered-gap lateral heterojunction with a small junction voltage, which is appealing for a platform for spin filters and one-dimensional topological interface states.

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Fucong Fei, Qianjin Wang, Zhongxia Wei, Rui Wang, Danfeng Pan, Bo Zhao, Xuefeng Wang, Xinran Wang, Fengqi Song, Baigeng Wang, Jianguo Wan, Guanghou Wang. 2015-03-02. Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport. https://arxiv.org/abs/1503.00390

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