arXiv · 1503.05116
DC thermal modeling of CNTFETs based on a semi-empirical approach
Abstract
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal parameters describing CNTFET behaviour in terms of saturation drain current, threshold voltage and M exponent in the knee region versus the temperature. To confirm the validity of the proposed thermal model, the simulations were performed in very different thermal conditions, obtaining I-V characteristics perfectly coincident with those of other models. The very low CPU calculation time makes the proposed model particularly suitable to be implemented in CAD applications.
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Roberto Marani, Anna Gina Perri. 2015-03-16. DC thermal modeling of CNTFETs based on a semi-empirical approach. https://arxiv.org/abs/1503.05116
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