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arXiv · 1503.05380

Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film

Yuka Tsuboi·Feijiu Wang·Daichi Kozawa·Kazuma Funahashi·Shinichiro Mouri·Yuhei Miyauchi·Taishi Takenobu·Kazunari Matsuda
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Abstract

Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter interactions. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective passivation and electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with increasing number of graphene layers and decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

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Yuka Tsuboi, Feijiu Wang, Daichi Kozawa, Kazuma Funahashi, Shinichiro Mouri, Yuhei Miyauchi, Taishi Takenobu, Kazunari Matsuda. 2015-03-18. Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film. https://doi.org/10.1039/c5nr03046c

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