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arXiv · 1503.06106

TiS3 transistors with tailored morphology and electrical properties

Joshua O. Island·Mariam Barawi·Robert Biele·Adrian Almazan·Jose M. Clamagirand·Jose R. Ares·Carlos Sanchez·Herre S. J. van der Zant·Jose V. Alvarez·Roberto D'Agosta·Isabel J. Ferrer·Andres Castellanos-Gomez
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Abstract

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping.

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Joshua O. Island, Mariam Barawi, Robert Biele, Adrian Almazan, Jose M. Clamagirand, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Jose V. Alvarez, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos-Gomez. 2015-03-20. TiS3 transistors with tailored morphology and electrical properties. https://doi.org/10.1002/adma.201405632

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