Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 1503.08729

Implications of magnetic and magnetodielectric behavior of GdCrTiO5

Tathamay Basu·Kiran Singh·Smita Gohil·Shankar Ghosh·E. V. Sampathkumaran
View original source ↗Read source document ↗Export metadata ↓

Abstract

We have carried out dc magnetization (M), heat-capacity (C) and dielectric studies down to 2K for the compound GdCrTiO5, crystallizing in orthorhombic Pbam structure, in which well-known multiferroics RMn2O5 (R= Rare-earths) form. The points of emphasis are: (i) The magnetic ordering temperature of Cr appears to be suppressed compared to that in isostructural Nd counterpart, NdCrTiO5, for which the Neel temperature is about 21 K. This finding on the Gd compound suggests that Nd 4f orbital plays a role on the magnetism of Cr in contrast to a proposal long ago. (ii) Dielectric constant does not exhibit any notable feature below about 30 K in the absence of external magnetic field, but a peak appears and gets stronger with the application of external magnetic fields, supporting the existence of magnetodielectric coupling. (iii) The dielectric anomalies appear even near 100 K, which can be attributed to short-range magnetic-order. We also observe a gain in spectral weight below about 150 K in Raman spectra in the frequency range 150 to 400 cm-1, which could be magnetic in origin supporting short-range magnetic order. It is of interest to explore whether geometrically frustration plays any role on the dielectric properties of this family, as in the case of RMn2O5.

Explore related subjects

cond-mat.mtrl-scicond-mat.str-elphysics.chem-ph

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Tathamay Basu, Kiran Singh, Smita Gohil, Shankar Ghosh, E. V. Sampathkumaran. 2015-06-03. Implications of magnetic and magnetodielectric behavior of GdCrTiO5. https://doi.org/10.1063/1.4937399

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

A hierarchy of thermodynamics learning frameworks for inelastic constitutive modeling

Recent advances in physics-augmented neural networks have enabled thermodynamically consistent data-driven constitutive modeling of complex inelastic materials. Most existing approaches, however, implicitly adopt a specific thermodynamic framework and embed structural assumptions such as normality, dual dissipation potentials, or other structure from manually constructed models directly into the learning architecture. Consequently, differences in predictive performance may arise not only from data or network design, but also from the underlying theoretical assumptions. In this work, we present a unified comparison of several thermodynamically consistent inelastic modeling frameworks from a machine learning perspective. We consider internal-variable formulations with dissipation potential, generalized standard materials, and metriplectic structures, and we analyze their structural assumptions, admissible dependencies, convexity requirements, and implications for dissipation and evolution. Each framework is implemented within a common neural potential architecture based on invariant representations and neural ordinary differential equations. This unified setting ensures that performance differences can be attributed to thermodynamic structure rather than architectural variation. The models are trained and evaluated on three representative inelastic datasets generated from high-fidelity representative volume element simulations: an elastoplastic alloy, a viscoelastic composite, and a rate-dependent crystal plasticity polycrystal. By isolating the role of thermodynamic structure, we assess how restrictions such as duality, normality, operator-based evolution, and convexity influence learnability, expressiveness, stability, and generalization.

cond-mat.mtrl-sci↗
arXiv2026

Berry Curvature Driven Transport in Silicon-Compatible Altermagnetic $α$-MnTe Thin Films

Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of $α$-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net bulk magnetization, the films exhibit a pronounced hysteretic Hall response, providing transport evidence consistent with finite Berry curvature generated by symmetry breaking in the thin-film geometry. High-resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure, consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures.

cond-mat.mtrl-sci↗
arXiv2026

All-Optical Control of Interfacial Polarization in MoS$_2$/WSe$_2$ Heterobilayers

All-optical tuning of van der Waals heterostructures with coherent radiation offers a promising path toward ultrafast memory and optoelectronic devices. In the first-principles framework of real-time time-dependent density functional theory, we predict the induction of a persistent, long-lived out-of-plane polarization in MoS$_2$/WSe$_2$ heterobilayers, resonantly driven by intense ultrafast pulses. While weak fields preserve the intrinsic type-II band alignment, intermediate intensities trigger a four-fold enhancement of interlayer charge transfer. By analyzing the high-harmonic generation spectrum, we identify a transition from the perturbative to the strong-field regime inducing photoinduced interfacial polarity. We additionally show that lattice strain, ubiquitously present in heterobilayers, can be used as additional knob to adjust the resonant condition without compromising the permanent dipole induction. Our findings provide a theoretical blueprint for the all-optical manipulation of polar phases in low-dimensional heterostructures at the femtosecond scale.

cond-mat.mtrl-sci↗