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arXiv · 1505.05306

Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires

Jaya Kumar Panda·Arup Chakraborty·Indra Dasgupta·Elena Hasanu·Daniele Ercolani·Mauro Gemmi·Lucia Sorba·Anushree Roy
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Abstract

We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite-zincblende interface. Our experimental results are further supported by electronic structure calculations for such periodic heterostructured interface.

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Jaya Kumar Panda, Arup Chakraborty, Indra Dasgupta, Elena Hasanu, Daniele Ercolani, Mauro Gemmi, Lucia Sorba, Anushree Roy. 2015-05-20. Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires. https://arxiv.org/abs/1505.05306

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