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arXiv · 1506.01537

High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

Y. Yuan·Y. Wang·K. Gao·M. Khalid·C. Wu·W. Zhang·F. Munnik·E. Weschke·C. Baehtz·W. Skorupa·M. Helm·S. Zhou
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Abstract

We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.

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Y. Yuan, Y. Wang, K. Gao, M. Khalid, C. Wu, W. Zhang, F. Munnik, E. Weschke, C. Baehtz, W. Skorupa, M. Helm, S. Zhou. 2015-06-04. High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films. https://doi.org/10.1088/0022-3727%2F48%2F23%2F235002

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