Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 1509.03430

Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

Le Duc Anh·Daiki Kaneko·Pham Nam Hai·Masaaki Tanaka
View original source ↗Read source document ↗Export metadata ↓

Abstract

We investigate the crystal structure, transport and magnetic properties of Fe-doped ferromagnetic semiconductor (Al1-x,Fex)Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room temperature and insulating behavior at low temperature. The (Al1-x,Fex)Sb thin films with x lower or equal to 10% maintain the zinc blende crystal structure of the host material AlSb. The (Al1-x,Fex)Sb thin film with x = 10% shows intrinsic ferromagnetism with a Curie temperature (TC) of 40 K. In the (Al1-x,Fex)Sb thin film with x = 14%, a sudden drop of mobility and TC was observed, which may be due to microscopic phase separation. The observation of ferromagnetism in (Al,Fe)Sb paves the way to realize a spin-filtering tunnel barrier that is compatible with well-established III-V semiconductor devices.

Explore related subjects

cond-mat.mtrl-sci

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Le Duc Anh, Daiki Kaneko, Pham Nam Hai, Masaaki Tanaka. 2015-09-11. Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb. https://doi.org/10.1063/1.4937142

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

A hierarchy of thermodynamics learning frameworks for inelastic constitutive modeling

Recent advances in physics-augmented neural networks have enabled thermodynamically consistent data-driven constitutive modeling of complex inelastic materials. Most existing approaches, however, implicitly adopt a specific thermodynamic framework and embed structural assumptions such as normality, dual dissipation potentials, or other structure from manually constructed models directly into the learning architecture. Consequently, differences in predictive performance may arise not only from data or network design, but also from the underlying theoretical assumptions. In this work, we present a unified comparison of several thermodynamically consistent inelastic modeling frameworks from a machine learning perspective. We consider internal-variable formulations with dissipation potential, generalized standard materials, and metriplectic structures, and we analyze their structural assumptions, admissible dependencies, convexity requirements, and implications for dissipation and evolution. Each framework is implemented within a common neural potential architecture based on invariant representations and neural ordinary differential equations. This unified setting ensures that performance differences can be attributed to thermodynamic structure rather than architectural variation. The models are trained and evaluated on three representative inelastic datasets generated from high-fidelity representative volume element simulations: an elastoplastic alloy, a viscoelastic composite, and a rate-dependent crystal plasticity polycrystal. By isolating the role of thermodynamic structure, we assess how restrictions such as duality, normality, operator-based evolution, and convexity influence learnability, expressiveness, stability, and generalization.

cond-mat.mtrl-sci↗
arXiv2026

Berry Curvature Driven Transport in Silicon-Compatible Altermagnetic $α$-MnTe Thin Films

Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of $α$-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net bulk magnetization, the films exhibit a pronounced hysteretic Hall response, providing transport evidence consistent with finite Berry curvature generated by symmetry breaking in the thin-film geometry. High-resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure, consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures.

cond-mat.mtrl-sci↗
arXiv2026

All-Optical Control of Interfacial Polarization in MoS$_2$/WSe$_2$ Heterobilayers

All-optical tuning of van der Waals heterostructures with coherent radiation offers a promising path toward ultrafast memory and optoelectronic devices. In the first-principles framework of real-time time-dependent density functional theory, we predict the induction of a persistent, long-lived out-of-plane polarization in MoS$_2$/WSe$_2$ heterobilayers, resonantly driven by intense ultrafast pulses. While weak fields preserve the intrinsic type-II band alignment, intermediate intensities trigger a four-fold enhancement of interlayer charge transfer. By analyzing the high-harmonic generation spectrum, we identify a transition from the perturbative to the strong-field regime inducing photoinduced interfacial polarity. We additionally show that lattice strain, ubiquitously present in heterobilayers, can be used as additional knob to adjust the resonant condition without compromising the permanent dipole induction. Our findings provide a theoretical blueprint for the all-optical manipulation of polar phases in low-dimensional heterostructures at the femtosecond scale.

cond-mat.mtrl-sci↗