Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 1509.06169

Resistive Switching in Nanodevices

Hannes Raebiger·Antonio Claudio M. Padilha·Alexandre R. Rocha·Gustavo M. Dalpian
View original source ↗Read source document ↗Export metadata ↓

Abstract

Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains unknown. We show that the different resistive states are due to different spontaneously charged states, characterized by different `band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. These multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator `storage medium', and propose a new magnetic memristor device with increased storage capacity.

Explore related subjects

cond-mat.mtrl-sci

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Hannes Raebiger, Antonio Claudio M. Padilha, Alexandre R. Rocha, Gustavo M. Dalpian. 2015-09-21. Resistive Switching in Nanodevices. https://arxiv.org/abs/1509.06169

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

GRAINSMITH: A Generator of Polycrystalline Models for Atomistic Simulations with Statistical and Grain-Boundary Morphology Control

Atomistic studies of grain-boundary engineering, grain-size effects and dopant enrichment require reproducible models with prescribed microstructural features. We present GRAINSMITH, an open-source Python package for generating statistically controlled polycrystalline models with selectable grain-boundary morphologies for molecular dynamics and subsequent relaxation. Within supported feature combinations, a single configuration specifies grain-size and volume distributions, crystallographic texture, boundary-area-weighted disorientation-angle distributions, phase composition and grain-boundary dopant placement. Crystal construction supports 230 crystallographic space groups. Periodic Voronoi and volume-targeted Laguerre tessellations provide planar boundaries, while distinct geometry backends generate smoothly curved and band-limited self-affine boundaries. A registry of twenty-six checks assesses applicable inputs, construction properties and outputs. Each run exports LAMMPS data and Extended XYZ files together with structural and statistical descriptors and machine-readable provenance. For a fixed software version and computational environment, the configuration and random seed determine byte-reproducible atomic configurations and scientific data across supported worker counts. By combining statistical specification, boundary-morphology control and reproducible atomistic output, GRAINSMITH supports systematic studies of microstructural effects and quantitative comparisons across generated models.

cond-mat.mtrl-sci↗
arXiv2026

Structure and dynamics of the negative thermal expansion material Cd(CN)$_2$ under hydrostatic pressure

We use a combination of variable-temperature / variable-pressure neutron powder diffraction, variable-pressure inelastic neutron scattering, and quantum chemical calculations to interrogate the behaviour of the negative thermal expansion (NTE) material $^{114}$Cd(CN)$_2$ under hydrostatic pressure. We determine the equation of state of the ambient-pressure phase, and discover the so-called `warm hardening' effect whereby the material becomes elastically stiffer as it is heated. We also identify a number of high-pressure phases, and map out the phase behaviour of Cd(CN)$_2$ over the range $0\leq p\leq0.5$\,GPa, $100\leq T\leq300$\,K. As expected for an NTE material, the low-energy phonon frequencies are found to soften under pressure, and we determine an effective Gr{ü}neisen parameter for these modes. Finally, we show that the elastic behaviour of Cd(CN)$_2$ is sensitive to the local Cd coordination environment, which suggests an interplay between short- (phononic) and long-timescale (cyanide flips) fluctuations in Cd(CN)$_2$.

cond-mat.mtrl-sci↗
arXiv2026

Unconventional Magnetism, Sliding Ferroelectricity, and Magneto-Optical Kerr Effect in Multiferroic Bilayers

Antiferromagnetic (AFM) materials provide a platform to couple altermagnetic (AM) spin-splitting with the magneto-optical Kerr effect (MOKE), offering potential for next-generation quantum technologies. In this work, first-principles calculations, symmetry analysis, and kp modeling are employed to show that interlayer sliding in AFM multiferroic bilayers enables control of electronic, magnetic, and magneto-optical properties. This study reveals an intriguing dimension-driven AM crossover: the 2D paraelectric (PE) bilayer exhibits spin-degenerate bands protected by the [C2||Mc] spin-space symmetry, whereas the 3D counterpart manifests AM spin-splitting along kz \neq 0 paths. Furthermore, interlayer sliding breaks this Mc symmetry and stabilizes a ferroelectric (FE) state with compensated ferrimagnetism, where the Zeeman-like field is responsible for the nonrelativistic spin-splitting. In the FE phase, spin-orbit coupling (SOC) lifts accidental degeneracies and produces `alternating' spin-polarized bands through the interplay of Zeeman and Rashba effects. Crucially, spin polarization, ferrovalley polarization, and the Kerr angle can all be reversed by switching either sliding ferroelectricity or the Neel vector. Our findings reveal the rich coupling among electronic, magnetic, and optical orders in sliding multiferroics, illustrating new prospects for ultralow-power spintronic and optoelectronic devices.

cond-mat.mtrl-sci↗