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arXiv · 1510.00830

Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

Zhihao Yu·Zhun-Yong Ong·Yiming Pan·Yang Cui·Run Xin·Yi Shi·Baigeng Wang·Yun Wu·Tangsheng Che·Yong-Wei Zhang·Gang Zhang·Xinran Wang
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Abstract

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scaling with temperature, carrier density and dielectric constant. The excellent agreement between our theoretical analysis and experimental data demonstrates unambiguously that room-temperature phonon-limited transport is achieved in monolayer MoS2, which is a necessary factor for electronic device applications.

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Zhihao Yu, Zhun-Yong Ong, Yiming Pan, Yang Cui, Run Xin, Yi Shi, Baigeng Wang, Yun Wu, Tangsheng Che, Yong-Wei Zhang, Gang Zhang, Xinran Wang. 2015-10-03. Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening. https://arxiv.org/abs/1510.00830

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