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arXiv · 1603.09117

Large linear magnetoresistance in a new Dirac material BaMnBi2

Yi-Yan Wang·Qiao-He Yu·Tian-Long Xia
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Abstract

We report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. The Hall data reveals electron-type carriers and a mobility mu(5K) =1500cm2/Vs. The temperature dependence of magnetization displays behavior that is different from CaMnBi2 or SrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2. Angle-dependent magnetoresistance reveals the quasi-two-dimensional Fermi surface. A crossover from semiclassical MR-H2 dependence in low field to MR-H dependence in high field is observed in transverse magnetoresistance. Our results indicate the anisotropic Dirac fermion states in BaMnBi2.

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Yi-Yan Wang, Qiao-He Yu, Tian-Long Xia. 2016-03-30. Large linear magnetoresistance in a new Dirac material BaMnBi2. https://doi.org/10.1088/1674-1056%2F25%2F10%2F107503

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