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arXiv · 1606.05821

Smearing of the quantum anomalous Hall effect due to statistical fluctuations of magnetic dopants

Z. Yue·M. E. Raikh
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Abstract

Quantum anomalous Hall effect (QAH) is induced by substitution of a certain portion, x, of Bi atoms in a BiTe-based insulating parent compound by magnetic ions (Cr or V). We find the density of in-gap states, N(E), emerging as a result of statistic fluctuations of the composition, x, in the vicinity of the transition point, where the average gap, E_g, passes through zero. Local gap follows the fluctuations of x. Using the instanton approach, we show that, near the gap edges, the tails are exponential, ln N(E) \propto -(E_g-|E|), and the tail states are due to small gap reduction. Our main finding is that, even when the smearing magnitude exceeds the gap-width, there exists are semi-hard gap around zero energy, where ln N(E) \propto -E_g/|E| (ln E_g/|E|). The states responsible for N(E) originate from local gap reversals within narrow rings. The consequence of semi-hard gap is the Arrhenius, rather than variable-range hopping, temperature dependence of the diagonal conductivity at low temperatures.

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Z. Yue, M. E. Raikh. 2016-06-19. Smearing of the quantum anomalous Hall effect due to statistical fluctuations of magnetic dopants. https://doi.org/10.1103/physrevb.94.155313

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