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arXiv · 1611.00923

Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration

Vaidotas Miseikis·Federica Bianco·Vittorio Pellegrini·Marco Romagnoli·Camilla Coletti
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Abstract

We demonstrate rapid deterministic (seeded) growth of large single-crystals of graphene by chemical vapour deposition (CVD) utilising pre-patterned copper substrates with chromium nucleation sites. Arrays of graphene single-crystals as large as several hundred microns are grown with a periodicity of up to 1 mm. The graphene is transferred to target substrates using aligned and contamination-free semi-dry transfer. The high quality of the synthesised graphene is confirmed by Raman spectroscopy and transport measurements, demonstrating room-temperature carrier mobility of 21 000 cm2 / V s when transferred on top of hexagonal boron nitride. By tailoring the nucleation of large single-crystals according to the desired device geometry, it will be possible to produce complex device architectures based on single-crystal graphene, thus paving the way to the adoption of CVD graphene in wafer-scale fabrication.

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Vaidotas Miseikis, Federica Bianco, Vittorio Pellegrini, Marco Romagnoli, Camilla Coletti. 2016-11-03. Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration. https://arxiv.org/abs/1611.00923

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