Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Kaixin Huang; Haotian Zheng; Weidong Luo

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arXiv · 1612.04756

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Kaixin Huang·Haotian Zheng·Weidong Luo

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Abstract

Bi$_2$Se$_3$ is a topological insulator and it is often doped with Te to compensate the $n$-type carriers due to Se vacancies. Different doping patterns of Te would influence the transport characteristics of the surface states. We study the Te atom distribution in Bi$_2$Se$_3$ with different Te concentrations, using first-principles density-functional-theory calculations. We show that Te prefer the outer layer, until the composition becomes Bi$_2$SeTe$_2$ and the outer layer is full of Te. And for a fixed ratio of Se and Te atoms within a single layer, we find that the structures with less number of adjacent Te-Se pairs tend to have lower energies. This might result in the formation of local Te clusters under low annealing temperatures.

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Kaixin Huang, Haotian Zheng, Weidong Luo. 2016-12-14. Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$. https://arxiv.org/abs/1612.04756

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