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arXiv · 1701.02027

Separate magnetization switching of hexagonal Co/BN/Co junctions grown epitaxially on c-sapphire

Alexander A. Tonkikh·Peter Werner
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Abstract

Magnetic tunnel junctions (MTJ) have been grown by using molecular beam epitaxy on c-plane Al2O3 substrates. The MTJ stacks consist of two ferromagnetic hcp-Co layers separated by a thin insulating h-BN barrier. The samples have been grown in a single run revealing single crystalline epitaxial structures with sharp interfaces as observed by applying transmission electron microscopy. The in-plane magnetization experiments have revealed separate magnetization switching of a thin top Co (soft) layer and a thick bottom Co (hard) layer. At zero magnetic field the two Co layers are found in an antiparallel state.

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Alexander A. Tonkikh, Peter Werner. 2017-01-08. Separate magnetization switching of hexagonal Co/BN/Co junctions grown epitaxially on c-sapphire. https://arxiv.org/abs/1701.02027

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