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arXiv · 1704.06414

Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves

Soobeom Lee·Naoto Yamashita·Yuichiro Ando·Shinji Miwa·Yoshishige Suzuki·Hayato Koike·Masashi Shiraishi
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Abstract

The temperature evolution of spin relaxation time, τsf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. τsf at 300 K is estimated to be 1.68+-0.03 ns and monotonically increased with decreasing temperature down to 100 K. Below 100 K, in contrast, it shows almost a constant value of ca. 5 ns. The temperature dependence of the conductivity of the Si channel shows a similar behavior to that of the τsf, i.e., monotonically increasing with decreasing temperature down to 100 K and a weak temperature dependence below 100 K. The temperature evolution of conductivity reveals that electron scattering due to magnetic impurities is negligible. A comparison between τsf and momentum scattering time reveals that the dominant spin scattering mechanism in the Si is the Elliott-Yafet mechanism, and the ratio of the momentum scattering time to the τsf attributed to nonmagnetic impurities is approximately 3.77*10^-6, which is more than two orders of magnitude smaller than that of copper.

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Soobeom Lee, Naoto Yamashita, Yuichiro Ando, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, Masashi Shiraishi. 2017-04-21. Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves. https://doi.org/10.1063/1.4982966

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