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arXiv · 1708.06531

Magneto-transport and Electronic Structures of BaZnBi$_2$

Yi-Yan Wang·Peng-Jie Guo·Qiao-He Yu·Sheng Xu·Kai Liu·Tian-Long Xia
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Abstract

We report the magneto-transport properties and electronic structures of BaZnBi$_2$. BaZnBi$_2$ is a quasi-two-dimensional (2D) material with metallic behavior. The transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov-de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combining with the trivial Berry phase extracted from SdH oscillation, BaZnBi$_2$ is suggested to be a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi$_2$.

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Yi-Yan Wang, Peng-Jie Guo, Qiao-He Yu, Sheng Xu, Kai Liu, Tian-Long Xia. 2017-08-22. Magneto-transport and Electronic Structures of BaZnBi$_2$. https://doi.org/10.1088/1367-2630%2Faa95e7

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