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arXiv · 1710.01865

Electric field Control of Exchange Bias by Resistive Switching

L. J. Wei·Z. Z. Hu·Y. J. Wang·G. X. Du·Y. Yuan·J. Wang·H. Q. Tu·B. You·S. M. Zhou·Y. Hu·J. Du
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Abstract

We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in high-resistance-state while negligible EB in low-resistance-state. Conductive filaments forming and rupture in the NiO layer but near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetic-electrical random access memory devices.

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L. J. Wei, Z. Z. Hu, Y. J. Wang, G. X. Du, Y. Yuan, J. Wang, H. Q. Tu, B. You, S. M. Zhou, Y. Hu, J. Du. 2017-10-05. Electric field Control of Exchange Bias by Resistive Switching. https://arxiv.org/abs/1710.01865

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