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arXiv · 1711.06342

Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe$_3$

Tai Kong·Karoline Stolze·Ni Danrui·Satya K. Kushwaha·Robert J. Cava
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Abstract

Single crystals of CrSbSe$_3$, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic, temperature- and field-dependent magnetization, temperature-dependent resistivity and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe$_3$ is paramagnetic and isotropic with a Curie-Weiss temperature of $\sim$145 K and an effective moment of $\sim$4.1 $\mu_B$/Cr. A ferromagnetic transition occurs at $T_c$ = 71 K. The $a$-axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along $b$, is the hard axis. Magnetic isotherms measured around $T_c$ do not follow the behavior predicted by simple mean field critical exponents for a second order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving $\beta\sim$0.25, $\gamma\sim$1.38 and $\delta\sim$6.6.

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Tai Kong, Karoline Stolze, Ni Danrui, Satya K. Kushwaha, Robert J. Cava. 2017-11-16. Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe$_3$. https://doi.org/10.1103/physrevmaterials.2.014410

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