Complementary logic operation based on electric-field controlled spin-orbit torques

Abstract

Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic gates for practical use, a complementary logic operation is essential but still missing despite a recent progress in spin-based logic devices. Here, we report the development of a complementary spin logic device using electric-field controlled spin-orbit torque (SOT) switching. In heavy metal/ferromagnet/oxide structures, the critical current for SOT-induced switching of perpendicular magnetization is efficiently modulated by an electric field via voltage-controlled magnetic anisotropy (VCMA) effect in a non-volatile manner. Moreover, the polarity of the VCMA is tuned by the modification of oxidation state at the ferromagnet/oxide interface. This allows us to fabricate both n-type and p-type spin logic devices and to enable a complementary logic operation, paving the way for the development of non-volatile and reconfigurable logic devices.