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arXiv · 1801.07396

Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure

V. Ya. Aleshkin·A. A. Dubinov·S. V. Morozov·M. Ryzhii·T. Otsuji·V. Mitin·M. S. Shur·V. Ryzhii
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Abstract

We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A$_3$B$_5$ heterostructures.

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V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii. 2018-01-23. Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure. https://arxiv.org/abs/1801.07396

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