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arXiv · 1806.01503

Influence of the ferroelectric polarization on the electronic structure of BaTiO3 thin films

N. Barrett·J. Rault·I. Krug·B. Vilquin·G. Niu·B. Gautier·D. Albertini·O. Renault
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Abstract

Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic structure has been studied using fully energy-filtered PhotoEmission Microscopy (PEEM) and synchrotron radiation. Shifts, induced by ferroelectric polarization, of up to 300 meV are observed in the work function of the sample. The surface is Ba-O terminated. Polarization-induced distortion of the electronic structure is observed in the valence band and on the Ba 3d, Ti 2p and O 1s core levels of BTO. Polarization dependent surface adsorption is observed. A simple electrostatic model based on net surface charge is not sufficient to explain the observed modifications in the electronic levels.

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N. Barrett, J. Rault, I. Krug, B. Vilquin, G. Niu, B. Gautier, D. Albertini, O. Renault. 2018-06-05. Influence of the ferroelectric polarization on the electronic structure of BaTiO3 thin films. https://doi.org/10.1002/sia.3369

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