arXiv · 1810.01918
Band Gap Modulation of Graphene on SiC
Abstract
A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.
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Stefan Kolev, Victor Atanasov, Hristiyan Aleksandrov, Teodor Milenov. 2018-09-12. Band Gap Modulation of Graphene on SiC. https://doi.org/10.1140/epjb%2Fe2018-90154-1
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