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arXiv · 1810.05328

Non-volatile ferroelectric memory effect in ultrathin α-In2Se3

Siyuan Wan·Yue Li·Wei Li·Xiaoyu Mao·Chen Wang·Jiyu Dong·Anmin Nie·Jianyong Xiang·Zhongyuan Liu·Wenguang Zhu·Hualing Zeng
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Abstract

Recent experiments on layered α-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders α-In2Se3 an excellent platform for developing two-dimensional (2D) layered-material based electronics with nonvolatile functionality. In this letter, we demonstrate non-volatile memory effect in a hybrid 2D ferroelectric field effect transistor (FeFET) made of ultrathin α-In2Se3 and graphene. The resistance of graphene channel in the FeFET is tunable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric α-In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top-gate ferroelectric. The 2D FeFET can be randomly re-written over more than $10^5$ cycles without losing the non-volatility. Our approach demonstrates a protype of re-writable non-volatile memory with ferroelectricity in van de Waals 2D materials.

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Siyuan Wan, Yue Li, Wei Li, Xiaoyu Mao, Chen Wang, Jiyu Dong, Anmin Nie, Jianyong Xiang, Zhongyuan Liu, Wenguang Zhu, Hualing Zeng. 2018-10-12. Non-volatile ferroelectric memory effect in ultrathin α-In2Se3. https://arxiv.org/abs/1810.05328

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