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arXiv · 1811.11069

Quantifying Chemical Structure and Atomic Energies in Amorphous Silicon Networks

Abstract

Amorphous materials are coming within reach of realistic computer simulations, but new approaches are needed to fully understand their intricate atomic structures. Here, we show how machine-learning (ML)-based techniques can give new, quantitative chemical insight into the atomic-scale structure of amorphous silicon (a-Si). Based on a similarity function ("kernel"), we define a structural metric that unifies the description of nearest- and next-nearest-neighbor environments in the amorphous state. We apply this to an ensemble of a-Si networks, generated in melt-quench simulations with an ML-based interatomic potential, in which we tailor the degree of ordering by varying the quench rates down to $10^{10}$ K/s (leading to a structural model that is lower in energy than the established WWW network). We then show how "machine-learned" atomic energies permit a chemical interpretation, associating coordination defects in a-Si with distinct energetic stability regions. The approach is straightforward and inexpensive to apply to arbitrary structural models, and it is therefore expected to have more general significance for developing a quantitative understanding of the amorphous state.

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Noam Bernstein, Bishal Bhattarai, Gábor Csányi, David A. Drabold, Stephen R. Elliott, Volker L. Deringer. 2018-11-27. Quantifying Chemical Structure and Atomic Energies in Amorphous Silicon Networks. https://doi.org/10.1002/anie.201902625

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